Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene

Controlling the spatial distribution of dopants in graphene is gateway to realization graphene-based electronic components. Here, it shown that a submonolayer self-assembled physisorbed molecules can be used as resist during post-synthesis nitrogen doping process realize nanopatterning graphene. The resulting formation domains with different concentrations allows obtaining n–n’ and p–n junctions A scanning tunneling microscopy measure properties at atomic scale reveal their intrinsic width found ≈7 nm corresponding sharp junction regime.